DocumentCode
3691308
Title
Infrared absorption at the LO phonon energy of metal/ semiconductor/metal composite materials
Author
Yoshihiro Ishitani;Eito Takeuchi;Bei Ma;Ken Morita
Author_Institution
Graduate School of Electrical and Electronic Engineering, Chiba University, 1-33, Yayoicho, Inage-ku, Chiba, 263-8522, Japan
fYear
2015
Firstpage
1
Lastpage
2
Abstract
Interaction of a semiconductor surface or interface and p-polarized infrared light has been investigated from the viewpoint of THz application. In this study the electric dipole absorption at the resonant energy to a longitudinal optical phonon is clearly observed also for s-polarization for lateral Ti/GaN/Ti and Ti/GaAs/Ti stripe structures. Modification of permittivity is found by the analysis of Raman and IR spectra.
Keywords
Decision support systems
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN
2162-2027
Electronic_ISBN
2162-2035
Type
conf
DOI
10.1109/IRMMW-THz.2015.7327461
Filename
7327461
Link To Document