THz emission from InP and InGaAs nanowires fabricated using electron beam lithography

THz emission from semiconductor nanowires has been an emerging trend since nanowires exhibit an increase in optical absorption by having a much larger effective surface area than films. The efficient THz emission is related to strong local field enhancement by coherent surface plasmons. In this work, we investigated THz generation from nanowires fabricated through a process that utilizes e-beam lithography and plasma etching, giving us full control of structural geometry such as the diameter, length, excellent-vertical alignment, and perfectly-uniform distribution.