Fully integrated vertical nanocontact photomixer for continuous-wave terahertz generation

A new type of a fully integrated vertical nanocontact THz photomixer was fabricated on LTG-GaAs/n⁺GaAs /SI-GaAs wafer with a single silver nanowire of ø60nm. The new vertical structure provides simple fabrication steps and better performance in terms of stability and antenna integration. The THz output power itself can be increased due to high photocurrent of ~7.5mA and small device capacitance of ~0.6 fF.