• DocumentCode
    3691460
  • Title

    Optimization of GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection

  • Author

    Mikhail Patrashin;Norihiko Sekine;Akifumi Kasamatsu;Issei Watanabe;Iwao Hosako;Tsuyoshi Takahashi;Masaru Sato;Yasuhiro Nakasha;Naoki Hara

  • Author_Institution
    National Institute of Information and Communications Technology, Tokyo 184-0015, Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    We evaluated optimal voltage sensitivity (SV) and noise equivalent power (NEP) of GaAsSb/InAlAs/InGaAs tunnel diode detectors in 220-330 GHz band at room temperature. The NEP values have strong dependence on the diode mesa size. With increasing the device area from 0.8×0.8μm2 to 1.4×1.4μm2, the estimated minimum NEP improved from 200pW/Hz1/2 to 80pW/Hz1/2.
  • Keywords
    "Sensitivity","Junctions","Resistance","Indium gallium arsenide","Current measurement","Voltage measurement"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327614
  • Filename
    7327614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3691460