مرکز منطقه ای اطلاع رساني علوم و فناوري - Optimization of GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection

DocumentCode :

3691460

Title :

Optimization of GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection

Author :

Mikhail Patrashin;Norihiko Sekine;Akifumi Kasamatsu;Issei Watanabe;Iwao Hosako;Tsuyoshi Takahashi;Masaru Sato;Yasuhiro Nakasha;Naoki Hara

Author_Institution :

National Institute of Information and Communications Technology, Tokyo 184-0015, Japan

fYear :

2015

Firstpage :

Lastpage :

Abstract :

We evaluated optimal voltage sensitivity (S_V) and noise equivalent power (NEP) of GaAsSb/InAlAs/InGaAs tunnel diode detectors in 220-330 GHz band at room temperature. The NEP values have strong dependence on the diode mesa size. With increasing the device area from 0.8×0.8μm² to 1.4×1.4μm², the estimated minimum NEP improved from 200pW/Hz^1/2 to 80pW/Hz^1/2.

Keywords :

"Sensitivity","Junctions","Resistance","Indium gallium arsenide","Current measurement","Voltage measurement"

Publisher :

ieee

Conference_Titel :

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on

ISSN :

2162-2027

Electronic_ISBN :

2162-2035

Type :

conf

DOI :

10.1109/IRMMW-THz.2015.7327614

Filename :

7327614

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3691460