• DocumentCode
    3691504
  • Title

    Nitrogen-ion-implanted GaAs Fabry-Pérot cavity photoconductor for THz photonics

  • Author

    E. Peytavit;M. Billet;Y. Desmet;G. Ducournau;D. Yarekha;J.-F Lampin

  • Author_Institution
    IEMN, U.M.R C.N.R.S/Lille University, Villeneuve d´Ascq, CS 60069 France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Ultrafast photoconductors using GaAs implanted by low energy N+ ions (<; 55 keV) are fabricated and characterized up to 320 GHz by means of a photomixing experiment. Around 90 μW of output power was obtained at 290 GHz with a 2-μm-diameter photoconductor based on GaAs implanted with a main dose of 1.1×1012 cm-2 and a subsequent annealing at 600°C.
  • Keywords
    "Gallium arsenide","Ions","Optical fibers","Optical feedback","Photoconducting materials","Optical films"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327720
  • Filename
    7327720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3691504