DocumentCode :
3691504
Title :
Nitrogen-ion-implanted GaAs Fabry-Pérot cavity photoconductor for THz photonics
Author :
E. Peytavit;M. Billet;Y. Desmet;G. Ducournau;D. Yarekha;J.-F Lampin
Author_Institution :
IEMN, U.M.R C.N.R.S/Lille University, Villeneuve d´Ascq, CS 60069 France
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
Ultrafast photoconductors using GaAs implanted by low energy N+ ions (<; 55 keV) are fabricated and characterized up to 320 GHz by means of a photomixing experiment. Around 90 μW of output power was obtained at 290 GHz with a 2-μm-diameter photoconductor based on GaAs implanted with a main dose of 1.1×1012 cm-2 and a subsequent annealing at 600°C.
Keywords :
"Gallium arsenide","Ions","Optical fibers","Optical feedback","Photoconducting materials","Optical films"
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN :
2162-2027
Electronic_ISBN :
2162-2035
Type :
conf
DOI :
10.1109/IRMMW-THz.2015.7327720
Filename :
7327720
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3691504
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