Title :
InP double heterojunction bipolar transistor for detection above 1 THz
Author :
D. Coquillat;V. Nodjiadjim;A. Konczykowska;N. Dyakonova;C. Consejo;S. Ruffenach;F. Teppe;M. Riet;A. Muraviev;A. Gutin;M. Shur;J. Godin;W. Knap
Author_Institution :
Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Univ. Montpellier, Montpellier, France
Abstract :
We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature detector operating above 1 THz. They can operate far above the frequencies at which they have gain and can still rectify THz current and voltage.
Keywords :
"Double heterojunction bipolar transistors","Indium phosphide","III-V semiconductor materials","Detectors","Yttrium","Wireless communication"
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
Electronic_ISBN :
2162-2035
DOI :
10.1109/IRMMW-THz.2015.7327777
