Title :
THz emission from grating-coupled AlGaN/GaN heterostructures: Comparison between plasmonic and thermal emission
Author :
I. Kašalynas;R. Venckevičius;V. Jakštas;V. Janonis;J. Laužadis;G. Seniutinas;E. Širmulis;G. Valušis;K. Požela;S. Juodkazis;P. Prystawko;M. Leszczyński
Author_Institution :
Center for Physical Sciences and Technology, A. Gostauto 11, LT-01108 Vilnius, Lithuania
Abstract :
The THz emission from large-area-grating coupler placed on the 2DEG AlGaN/GaN heterostructures was measured at frequency range 0.3-30 THz and temperature from 300 to 500 K with high spectral accuracy. The THz emission spectrum below 10 THz was found to be close to the thermal black-body radiation. Indistinct radiation modified with 2DEG plasma resonances was observed at frequencies below 3 THz.
Keywords :
"Gratings","Aluminum gallium nitride","Wide band gap semiconductors","Gallium nitride","HEMTs","Frequency measurement","MODFETs"
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
Electronic_ISBN :
2162-2035
DOI :
10.1109/IRMMW-THz.2015.7327829
