Title :
Raman scattering and terahertz spectroscopic characteristics of longitudinal optical phonons in i-GaAs/n-GaAs epitaxial structures
Author :
Hideo Takeuchi;Souta Asai;Shuichi Tsuruta;Takahiro Sumioka;Masaaki Nakayama
Author_Institution :
Department of Applied Physics, Graduate School of Engineering, Osaka City University 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan
Abstract :
Summary form only given. We have investigated longitudinal optical phonons (LO) characteristics in i-GaAs/n-GaAs epitaxial structures. The LO phonons and LO phonon-plasmon coupled modes were observed in the Raman scattering spectra, whereas only the coherent LO phonon was detected in terahertz spectroscopy. We conclude that the initial polarization is responsible for emission of the co-herent-LO-phonon terahertz wave.
Keywords :
"Phonons","Measurement by laser beam","Raman scattering","Optical polarization","Optical scattering","Epitaxial growth","Electric fields"
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
Electronic_ISBN :
2162-2035
DOI :
10.1109/IRMMW-THz.2015.7327888
