DocumentCode
3691631
Title
Raman scattering and terahertz spectroscopic characteristics of longitudinal optical phonons in i-GaAs/n-GaAs epitaxial structures
Author
Hideo Takeuchi;Souta Asai;Shuichi Tsuruta;Takahiro Sumioka;Masaaki Nakayama
Author_Institution
Department of Applied Physics, Graduate School of Engineering, Osaka City University 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan
fYear
2015
Firstpage
1
Lastpage
1
Abstract
Summary form only given. We have investigated longitudinal optical phonons (LO) characteristics in i-GaAs/n-GaAs epitaxial structures. The LO phonons and LO phonon-plasmon coupled modes were observed in the Raman scattering spectra, whereas only the coherent LO phonon was detected in terahertz spectroscopy. We conclude that the initial polarization is responsible for emission of the co-herent-LO-phonon terahertz wave.
Keywords
"Phonons","Measurement by laser beam","Raman scattering","Optical polarization","Optical scattering","Epitaxial growth","Electric fields"
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN
2162-2027
Electronic_ISBN
2162-2035
Type
conf
DOI
10.1109/IRMMW-THz.2015.7327888
Filename
7327888
Link To Document