• DocumentCode
    3691631
  • Title

    Raman scattering and terahertz spectroscopic characteristics of longitudinal optical phonons in i-GaAs/n-GaAs epitaxial structures

  • Author

    Hideo Takeuchi;Souta Asai;Shuichi Tsuruta;Takahiro Sumioka;Masaaki Nakayama

  • Author_Institution
    Department of Applied Physics, Graduate School of Engineering, Osaka City University 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. We have investigated longitudinal optical phonons (LO) characteristics in i-GaAs/n-GaAs epitaxial structures. The LO phonons and LO phonon-plasmon coupled modes were observed in the Raman scattering spectra, whereas only the coherent LO phonon was detected in terahertz spectroscopy. We conclude that the initial polarization is responsible for emission of the co-herent-LO-phonon terahertz wave.
  • Keywords
    "Phonons","Measurement by laser beam","Raman scattering","Optical polarization","Optical scattering","Epitaxial growth","Electric fields"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327888
  • Filename
    7327888