Terahertz emission from non-vertically aligned semiconductor nanowires

In this work THz emission of the non-vertically aligned GaMnAs and InGaAs nanowires (NWs) were investigated for the first time. THz emission azimuthal dependencies on different nanowire layers were measured. In addition THz pulse amplitude dependencies on an angle between the incident laser beam and a normal to the sample surface were accomplished for the removed NW layer. The investigated layers can be used in rotating polarization THz emitters. This application is very important because the principle of half wave plate cannot be used due to a wide spectrum of the THz pulses.