• DocumentCode
    3691687
  • Title

    The experimental results of fast switching system for millimeter wave transmission using photo-excited semiconductor

  • Author

    Mun Seok Choe;Kyu-Sup Lee;Nan Ei Yu;EunMi Choi

  • Author_Institution
    Department of Physics, Ulsan National Institute of Science and Technology (UNIST) Ulsan, 689798, Republic of Korea
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Photo-excited semiconductor switching system for fast control of millimeter wave is developed and tested with an oversized corrugated horn (D/ λ > 10) and quasi-optical mirror setup. Semi-insulating GaAs (100) having direct band-gap shows fast switch ON-OFF (<; 100 ns) whereas semi-insulating Si (100) having indirect band-gap shows fast switch ON (<; 100 ns) and slow switch OFF (<; 1 ms) for the millimeter-wave regime.
  • Keywords
    "Optical switches","RF signals","Switching systems","Photonic band gap","Radiative recombination","Millimeter wave technology"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327945
  • Filename
    7327945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3691687