DocumentCode :
3691945
Title :
I-fuse: A disruptive OTP technology for with excellent manufacturability
Author :
Shine Chung;Wen-Kuan Fang
Author_Institution :
Attopsemi Technology Co., LTD, 1A2-A1 No. 1 Li-Hsin 1st Rd., Hsinchu, Taiwan, 300-77
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
I-fuse* is a disruptive fuse-based OTP technology based on true electromigration with excellent manufacturability. Conventional ways of programming a fuse is by applying a large current to break the fuse such that the program behavior is like an explosion. The debris created during the explosion may micro-bridge again and grow back to cause several reliability issues. By limiting the programming current below a catastrophic breaking point, the reliability of the I-fuse can be 100×. By using junction diode, instead of MOS, as program selector, the cell size can be only 1/100. By making fuse cells small to preserve heat better, the program current can be only 1/10 of the conventional electrical fuse (eFuse).
Keywords :
"Fuses","Programming","Reliability","CMOS integrated circuits","Explosions","Nonvolatile memory","Logic gates"
Publisher :
ieee
Conference_Titel :
Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & 2015 International Symposium on Semiconductor Manufacturing (ISSM), 2015
Type :
conf
Filename :
7328905
Link To Document :
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