• DocumentCode
    3692355
  • Title

    SAW characteristics of AlN/SiO2/3C-SiC layered structure with embedded electrodes

  • Author

    Qiaozhen Zhang;Tao Han;Gongbin Tang;Jing Chen;Ken-ya Hashimoto

  • Author_Institution
    Department of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel sandwich structure of AlN/SiO2/3C-SiC with embedded electrodes, which enables the growth of highly quality AlN thin films, is proposed and studied. The phase velocity, coupling factor, and temperature coefficient of frequency (TCF) of SAWs in the proposed structure have been investigated using the finite element method (FEM). The simulation results show that high velocity of 5,485m/s and large effective coupling factor of 1.45% can be simultaneously obtained, which is about 3.4 times larger than the value previously reported. The excellent zero TCF is also achieved without deteriorating the coupling factor by adding the SiO2 overlay.
  • Keywords
    "Aluminum nitride","Electrodes","III-V semiconductor materials","Couplings","Temperature","Surface acoustic waves","Surface acoustic wave devices"
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2015 IEEE International
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2015.0116
  • Filename
    7329346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3692355