DocumentCode
3692401
Title
High-Q piezoelectric Lamb wave resonators based on AlN plates with chamfered corners
Author
Chih-Ming Lin;Jie Zou;Yung-Yu Chen;Albert P. Pisano
Author_Institution
Department of Mechanical Engineering, University of California, Berkeley, 94720, USA
fYear
2015
Firstpage
1
Lastpage
4
Abstract
A novel approach to the boost quality factor (Q) of Lamb wave resonators by chamfering the aluminum nitride (AlN) plate is investigated for the first time. It is well-known that the Q´s of the AlN Lamb wave resonators are degraded due to energy dissipation through the support tethers. In this work, similar to the beveled edges used in AT-cut quartz resonators, the chamfered corners are utilized to trap vibration energy in the AlN plate to enhance the anchor Q´s. Based on finite element analysis (FEA) simulated results, the AlN plate with chamfered corners can efficiently reduce mechanical vibrations in support tethers and trap more mechanical energy in the plate. The experimental results demonstrate that the loaded Q of the Lamb wave resonator is boosted from 2,041 to 3,016 and the minimum impedance is reduced from 87.4 O to 61.6 O by simply chamfering the AlN rectangular plate, showing a 1.48× increase in measured Q´s.
Keywords
"Aluminum nitride","III-V semiconductor materials","Resonant frequency","Substrates","Couplings","Damping","Frequency measurement"
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2015 IEEE International
Type
conf
DOI
10.1109/ULTSYM.2015.0360
Filename
7329392
Link To Document