DocumentCode :
36927
Title :
A 3.4-pJ FeRAM-Enabled D Flip-Flop in 0.13- \\mu \\hbox {m} CMOS for Nonvolatile Processing in Digital Systems
Author :
Qazi, M. ; Amerasekera, A. ; Chandrakasan, Anantha P.
Author_Institution :
Cypress Semicond., San Jose, CA, USA
Volume :
49
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
202
Lastpage :
211
Abstract :
In order to realize a digital system with no distinction between “on” and “off,” the computational state must be stored in nonvolatile memory elements. If the energy cost and time cost of managing the computational state in nonvolatile memory can be lowered to the microsecond and picojoule-per-bit level, such a system could operate from unreliable harvested energy, never requiring a reboot. This work presents a nonvolatile D-flip-flop (NVDFF) designed in 0.13- μm CMOS that retains state in ferroelectric capacitors during sporadic power loss. The NVDFF is integrated into an ASIC design flow, and a test-case nonvolatile FIR filter with an accompanying power management unit automatically saves and restores the state based on the status of a one-bit indicator of energy availability. Correct operation has been verified over power-cycle intervals from 4.8 μs to 1 day. The round-trip save-restore energy is 3.4 pJ per NVDFF. Also presented are statistical measurements across 21 thinspace000 NVDFFs to validate the capability of the circuit to achieve the requisite 10-ppm failure rate for embedded system applications.
Keywords :
CMOS logic circuits; ferroelectric capacitors; ferroelectric storage; flip-flops; random-access storage; ASIC design flow; CMOS integrated circuit; FeRAM enabled D flip-flop; energy 3.4 pJ; ferroelectric capacitor; nonvolatile D-flip-flop; nonvolatile FIR filter; nonvolatile memory element; nonvolatile processing; size 0.13 mum; sporadic power loss; time 4.8 mus to 1 d; CMOS integrated circuits; Capacitors; Field effect transistors; Finite impulse response filters; Latches; Nonvolatile memory; Sensors; Digital electronics; embedded systems; energy harvesting; ferroelectric random access memory (FeRAM); latches; low-power electronics; nonvolatile memory; registers;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2282112
Filename :
6617722
Link To Document :
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