DocumentCode
3692894
Title
Gallium nitride power MMICs - promise and problems
Author
Charles F. Campbell
Author_Institution
Qorvo, 500 West Renner Road, Richardson, Texas, 75080, U.S.A.
fYear
2015
Firstpage
1
Lastpage
6
Abstract
While the advantages of GaN are manifest, many of the features that make GaN transistors attractive can be shown to create significant issues that are typically not encountered with lower voltage technologies. In this talk, specific examples and scenarios are discussed highlighting some selected benefits and issues associated GaN MMIC technology and design.
Keywords
"Gallium nitride","Power amplifiers","Transistors","Bandwidth","Power generation","Impedance","MMICs"
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2015
Type
conf
DOI
10.1109/INMMIC.2015.7330349
Filename
7330349
Link To Document