DocumentCode :
3692894
Title :
Gallium nitride power MMICs - promise and problems
Author :
Charles F. Campbell
Author_Institution :
Qorvo, 500 West Renner Road, Richardson, Texas, 75080, U.S.A.
fYear :
2015
Firstpage :
1
Lastpage :
6
Abstract :
While the advantages of GaN are manifest, many of the features that make GaN transistors attractive can be shown to create significant issues that are typically not encountered with lower voltage technologies. In this talk, specific examples and scenarios are discussed highlighting some selected benefits and issues associated GaN MMIC technology and design.
Keywords :
"Gallium nitride","Power amplifiers","Transistors","Bandwidth","Power generation","Impedance","MMICs"
Publisher :
ieee
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2015
Type :
conf
DOI :
10.1109/INMMIC.2015.7330349
Filename :
7330349
Link To Document :
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