• DocumentCode
    3692894
  • Title

    Gallium nitride power MMICs - promise and problems

  • Author

    Charles F. Campbell

  • Author_Institution
    Qorvo, 500 West Renner Road, Richardson, Texas, 75080, U.S.A.
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    While the advantages of GaN are manifest, many of the features that make GaN transistors attractive can be shown to create significant issues that are typically not encountered with lower voltage technologies. In this talk, specific examples and scenarios are discussed highlighting some selected benefits and issues associated GaN MMIC technology and design.
  • Keywords
    "Gallium nitride","Power amplifiers","Transistors","Bandwidth","Power generation","Impedance","MMICs"
  • Publisher
    ieee
  • Conference_Titel
    Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2015
  • Type

    conf

  • DOI
    10.1109/INMMIC.2015.7330349
  • Filename
    7330349