In situ waveform measurement approach within an inverse class F GaN power amplifier

In this contribution a gallium nitride (GaN) based inverse class F (F^-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F^-1 power amplifier. With this measurement results, a more in-depth investigation of the F^-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.