RF active circuit simulating a floating inductance

In this paper a new design scheme simulating a floating inductive behavior at RF frequency is presented. The proposed floating active inductor shows a very high quality factor, high linearity and is suitable for many microwave applications and ICs. The design is a fully symmetrical two-port and reciprocal structure, based on two cascaded pairs of highly linear capacitance gyrators. It shows an inductance value of 370nH at 220MHz with a quality factor greater of 6e4. A prototype board has been fabricated with discrete components and tested with successfully results.