DocumentCode
3692918
Title
Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology
Author
Rasmus S. Michaelsen;Tom K. Johansen;Kjeld Tamborg;Michele Squartecchia
Author_Institution
Department of Electrical Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
fYear
2015
Firstpage
1
Lastpage
3
Abstract
In this paper, we present flicker noise measurements of two X-band direct conversion mixers implemented in a SiGe:C BiCMOS technology. Both mixers use a ring structure with either Schottky diodes or diode-connected HBTs for double balanced operation. The mixers are packaged in a metal casing on an Arlon 25N substrate to shield the sensitive noise measurement. Conversion loss measurements of both mixers is performed both for on-wafer and packaged versions. The experimental results shows that the Schottky diode mixer exhibits a 1/f noise corner frequency of 250 kHz, while the diode connected HBT circuit demonstrates a 1/f noise corner frequency around 10 kHz.
Keywords
"Mixers","Schottky diodes","Noise measurement","Heterojunction bipolar transistors","Frequency measurement","Loss measurement"
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2015
Type
conf
DOI
10.1109/INMMIC.2015.7330373
Filename
7330373
Link To Document