Gallium nitride Schottky and MIS power switch performance comparison for 35 GHz applications

AlGaN/GaN high electron mobility transistors (HEMTs) have attracted considerable attention on high power - high frequency switch applications. With the aim to optimize the switching performances, in this paper the comparison between traditional Schottky and alternative MIS solution for Single-Pole Double-Throw (SPDT) switching circuit working in the Ka band will be presented, enhancing the benefits of Metal-Insulator-Semiconductor (MIS) technology in terms of DC characteristics and consequently RF Insertion Loss and Isolation, as well as the related FOMs and the full compliance with monolithic HPAs and LNAs integration. Robustness related to maximum power handling will be also presented.