• DocumentCode
    3692927
  • Title

    Technology comparison and considerations for handset power amplifiers

  • Author

    Peter J. Zampardi;Brian Moser

  • Author_Institution
    Qorvo, Inc., 30700 Russell Ranch Road, Westlake Village, CA 91362, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Average power power tracking (APT) and envelope tracking (ET) power amplifiers require high efficiency across a range of supply voltages, which is a change from old fixed voltage systems. The performance of these amplifiers is usually characterized by a so-called “waterfall curve”[1-3]. While circuit design choices can certainly be a factor in this roll-off of PAE with decreasing supply voltage, it is also necessary to evaluate device technologies to understand the trade-offs and opportunities they present for these applications. For technology development, it is advantageous to see if “simpler” measurements, such as RF-Knee[4] correlate to these waterfall measurements since they are easier to collect. In this paper, the considerations for device performance for these applications will be presented and discussed.
  • Keywords
    "Radio frequency","Silicon germanium","Heterojunction bipolar transistors","PHEMTs","Gallium arsenide","Knee"
  • Publisher
    ieee
  • Conference_Titel
    Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2015
  • Type

    conf

  • DOI
    10.1109/INMMIC.2015.7330382
  • Filename
    7330382