30 μm-pitch oxide TFT-based gate driver design for small-size, high-resolution, and narrow-bezel displays

Author

Di Geng ; Yuan Feng Chen ; Mativenga, Mallory ; Jin Jang

Author_Institution

Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

805

Lastpage

807

Abstract

We report the design and fabrication of a high-yield, a high-speed, and an ultranarrow gate driver with amorphous-indium - gallium - zinc-oxide thin-film transistors (TFTs). A single stage of the gate driver consists of nine TFTs and one capacitor. For supply voltage (VDD) of 20 V, the gate driver operates with a pulsewidth of 2 μs, which is compatible with a 4k2k display operated at 240 Hz. In addition, the proposed gate driver is ultrasmall in physical size, which is only 30 μm in width (pitch) and 720 μm in length, and thus suitable for small-size, high-resolution, and narrow bezel display.

Keywords

amorphous semiconductors; display devices; driver circuits; indium compounds; thin film transistors; In-Ga-Zn-O; TFT-based gate driver design; amorphous-indium-gallium-zinc-oxide TFT; narrow-bezel displays; size 30 mum; size 720 mum; thin-film transistors; time 2 mus; ultranarrow gate driver; voltage 20 V; Capacitance; Capacitors; Fabrication; Layout; Logic gates; Shift registers; Thin film transistors; Beck-channel-etched ${a}$ -IGZO TFT; beck-channel-etched a-IGZO TFT; gate driver; high-resolution; high-speed; narrow-bezel;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2445319

Filename

7150351