DocumentCode :
3693766
Title :
High-frequency piezoelectric-on-Si MEMS resonator and numerical method for parameter extraction
Author :
Andreja Erbes;Abhinav Prasad;Ashwin A. Seshia
Author_Institution :
Engineering Department, University of Cambridge, Cambridge, United Kingdom
fYear :
2014
fDate :
6/1/2014 12:00:00 AM
Firstpage :
305
Lastpage :
307
Abstract :
This paper presents the design and characterization of a piezoelectrically-transduced (AlN) on silicon micro-mechanical resonator operating in its lateral bulk acoustic width-extensional mode at 28.73 MHz. The equivalent m-BVD model of the resonator is extracted using a least-squares-error algorithm which is presented in this paper. We report a mechanical Q factor of 5970 and motional resistance Rx of 273 Ω in vacuum (p0 = 30 mTorr) for the fundamental bulk acoustic mode for a 240 μm × 149 μm resonator. A good fit between the m-BVD model and the experimental data is obtained using the numerical fitting algorithm.
Keywords :
"Numerical models","Admittance measurement","Admittance","Micromechanical devices","Silicon","Integrated circuit modeling","Yttrium"
Publisher :
ieee
Conference_Titel :
European Frequency and Time Forum (EFTF), 2014
Type :
conf
DOI :
10.1109/EFTF.2014.7331493
Filename :
7331493
Link To Document :
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