DocumentCode
3693766
Title
High-frequency piezoelectric-on-Si MEMS resonator and numerical method for parameter extraction
Author
Andreja Erbes;Abhinav Prasad;Ashwin A. Seshia
Author_Institution
Engineering Department, University of Cambridge, Cambridge, United Kingdom
fYear
2014
fDate
6/1/2014 12:00:00 AM
Firstpage
305
Lastpage
307
Abstract
This paper presents the design and characterization of a piezoelectrically-transduced (AlN) on silicon micro-mechanical resonator operating in its lateral bulk acoustic width-extensional mode at 28.73 MHz. The equivalent m-BVD model of the resonator is extracted using a least-squares-error algorithm which is presented in this paper. We report a mechanical Q factor of 5970 and motional resistance Rx of 273 Ω in vacuum (p0 = 30 mTorr) for the fundamental bulk acoustic mode for a 240 μm × 149 μm resonator. A good fit between the m-BVD model and the experimental data is obtained using the numerical fitting algorithm.
Keywords
"Numerical models","Admittance measurement","Admittance","Micromechanical devices","Silicon","Integrated circuit modeling","Yttrium"
Publisher
ieee
Conference_Titel
European Frequency and Time Forum (EFTF), 2014
Type
conf
DOI
10.1109/EFTF.2014.7331493
Filename
7331493
Link To Document