• DocumentCode
    3693766
  • Title

    High-frequency piezoelectric-on-Si MEMS resonator and numerical method for parameter extraction

  • Author

    Andreja Erbes;Abhinav Prasad;Ashwin A. Seshia

  • Author_Institution
    Engineering Department, University of Cambridge, Cambridge, United Kingdom
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    305
  • Lastpage
    307
  • Abstract
    This paper presents the design and characterization of a piezoelectrically-transduced (AlN) on silicon micro-mechanical resonator operating in its lateral bulk acoustic width-extensional mode at 28.73 MHz. The equivalent m-BVD model of the resonator is extracted using a least-squares-error algorithm which is presented in this paper. We report a mechanical Q factor of 5970 and motional resistance Rx of 273 Ω in vacuum (p0 = 30 mTorr) for the fundamental bulk acoustic mode for a 240 μm × 149 μm resonator. A good fit between the m-BVD model and the experimental data is obtained using the numerical fitting algorithm.
  • Keywords
    "Numerical models","Admittance measurement","Admittance","Micromechanical devices","Silicon","Integrated circuit modeling","Yttrium"
  • Publisher
    ieee
  • Conference_Titel
    European Frequency and Time Forum (EFTF), 2014
  • Type

    conf

  • DOI
    10.1109/EFTF.2014.7331493
  • Filename
    7331493