DocumentCode
3694071
Title
A novel double floating-gate unified memory device
Author
Neil Di Spigna;Daniel Schinke;Srikant Jayanti;Veena Misra;Paul Franzon
Author_Institution
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, 27695 USA
fYear
2012
Firstpage
53
Lastpage
58
Abstract
A novel double floating-gate unified memory device is experimentally demonstrated for the first time. The device can be used to store both volatile and nonvolatile memory states simultaneously. Simulations of scaled devices show that the device offers several advantages compared to conventional memory devices. Such a device could have a dramatic impact on next generation memory architectures.
Keywords
"Nonvolatile memory","Dielectrics","Logic gates","Random access memory","Arrays","Threshold voltage","Voltage control"
Publisher
ieee
Conference_Titel
VLSI and System-on-Chip, 2012 (VLSI-SoC), IEEE/IFIP 20th International Conference on
Print_ISBN
978-1-4673-2658-2
Type
conf
DOI
10.1109/VLSI-SoC.2012.7332076
Filename
7332076
Link To Document