Title :
Influence of charge carrier density in silicon on spectrum band structure of photonic crystal
Author :
Borys Chernyshov
Author_Institution :
Radiospectroscopy Dept. of O.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine (IRE NASU), 12 Ak. Proskura Str., Kharkiv, 61085, Ukraine
Abstract :
This paper is devoted to numerical and experimental investigating of photonic crystals based on dielectric and semiconductor layers in millimeter waveband. The numerical modeling and the experimental measurement in frequency range of 22–40 GHz has been made. Decision of the charge carrier concentration values in silicon, which makes possible to use that material in microwave range has been made.
Conference_Titel :
Applied Physics (YSF), 2015 International Young Scientists Forum on
DOI :
10.1109/YSF.2015.7333188
