Vth self-adjusting tri-gate nanowire MOSFET for stability improvement of SRAM cell operating at 0.1 V

A tri-gate nanowire MOSFET with Vth self-adjustment mechanism is proposed and its operation is successfully demonstrated. In this device, Vth increases at off-state and Vth decreases at on-state. The fabricated device shows excellent subthreshold characteristics due to nanowire channel and exhibits clear Vth self-adjustment at ultra-low Vdd as low as 0.1V. Additionally, by circuit simulation based on the measured device, stability improvement of an SRAM cell is shown at Vdd = 0.1 V thanks to the Vth self-adjustment.