Title :
300 mm InGaAsOI substrate fabrication using the Smart CutTM technology
Author :
S. Sollier;J. Widiez;G. Gaudin;F. Mazen;T. Baron;M. Martin;M C. Roure;P. Besson;C. Morales;E. Beche;F. Fournel;S. Favier;A. Salaun;P. Gergaud;M. Cordeau;C. Veytizou;L. Ecarnot;D. Delprat;I. Radu;T. Signamarcheix
Author_Institution :
Univ. Grenoble Alpes, F-38000 Grenoble France
Abstract :
In this work we demonstrate for the first time 300 mm InGaAs on Insulator (InGaAs-OI) substrates. A 30 nm thick InGaAs layer was successfully transferred using low temperature Direct Wafer Bonding (DWB) and the Smart CutTM technology. The epitaxial growing process has been optimized to reduce the surface roughness of the InGaAs film at around 1.5 nm RMS. HR-XRD characterization on the transferred InGaAs layer indicates that the layer remains crystalline.
Keywords :
"Decision support systems","Bonding","Electron mobility","Silicon","Electron traps","Substrates","Physics"
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
DOI :
10.1109/S3S.2015.7333495
