Systematic evaluation of SOI Buried Oxide reliability for partially depleted and fully depleted applications

SOI Buried Oxide (BOX) electrical quality is assessed through Charge to Breakdown, Breakdown Voltage, low field leakage, BOX fixed charge density and BOX/Si interface trap density measurements. Breakdown electrical field higher than 10 MV.cm⁻¹ and 10 years lifetime at operating voltages in excess of 16V are reported on thin BOX layers.