• DocumentCode
    3694839
  • Title

    Systematic evaluation of SOI Buried Oxide reliability for partially depleted and fully depleted applications

  • Author

    W. Schwarzenbach;C. Malaquin;F. Allibert;G. Besnard;B.-Y. Nguyen

  • Author_Institution
    SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    SOI Buried Oxide (BOX) electrical quality is assessed through Charge to Breakdown, Breakdown Voltage, low field leakage, BOX fixed charge density and BOX/Si interface trap density measurements. Breakdown electrical field higher than 10 MV.cm−1 and 10 years lifetime at operating voltages in excess of 16V are reported on thin BOX layers.
  • Keywords
    "Electric breakdown","Silicon-on-insulator","Substrates","Current measurement","Voltage measurement","Density measurement","Leakage currents"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333496
  • Filename
    7333496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694839