DocumentCode :
3694841
Title :
A 23 nW CMOS ultra-low power temperature sensor operational from 0.2 V
Author :
Divya Akella Kamakshi;Aatmesh Shrivastava;Benton H. Calhoun
Author_Institution :
Dept. of Electrical Engineering, University of Virginia, Charlottesville, Virginia, USA
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
A proportional-to-absolute-temperature (PTAT) current element along with a current controlled oscillator (CCO) operational down to 0.2 V supply enables an ultra-low-power (ULP) temperature sensor. A bit-weighted current mirror (BWCM) architecture resists process-induced variation in the PTAT current. The power consumption is 23nW and the maximum inaccuracy is +1.5/-1.7°C from 0°C to 100°C with a 2-point calibration.
Keywords :
"Temperature sensors","Mirrors","CMOS integrated circuits","Oscillators","Power demand","Radiation detectors","Conferences"
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
Type :
conf
DOI :
10.1109/S3S.2015.7333498
Filename :
7333498
Link To Document :
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