• DocumentCode
    3694846
  • Title

    Enhanced low voltage digital & analog mixed-signal with 28nm FDSOI technology

  • Author

    F. Arnaud

  • Author_Institution
    STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents superior CMOS behavior in the field of low voltage and analog thanks to Fully Depleted Silicon On Insulator (FDSOI) used for 28nm technology. Performance and total power are improved by +100% and −200% versus regular bulk solution, respectively. Dispersion at low voltage is discussed evidencing 2x reduction thanks to efficient Forward Body Bias (FBB). Finally, key analog metrics such as gm, output voltage gain and matching factor enhancement are demonstrated.
  • Keywords
    "Low voltage","Transistors","Logic gates","Degradation","Electrostatics","CMOS integrated circuits","Wireless communication"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333503
  • Filename
    7333503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694846