DocumentCode
3694855
Title
Analog performance improvement of self-cascode structures composed by UTBB transistors using back gate bias
Author
R. T. Doria;R. Trevisoli;M. de Souza;M. A. Pavanello;D. Flandre
Author_Institution
Electrical Engineering Department, Centro Universitá
fYear
2015
Firstpage
1
Lastpage
3
Abstract
This paper explores the use of the back gate bias to enhance the analog performance of self-cascode structures composed by 25nm-long UTBB SOI MOSFETs. It is shown, for the first time, that the use of back gate bias can improve the intrinsic voltage gain by 15 dB, making it larger than the one presented by a 50nm-long single device.
Keywords
"Transistors","Decision support systems","Silicon","Periodic structures","Solids","Liquids","CMOS integrated circuits"
Publisher
ieee
Conference_Titel
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
Type
conf
DOI
10.1109/S3S.2015.7333512
Filename
7333512
Link To Document