• DocumentCode
    3694855
  • Title

    Analog performance improvement of self-cascode structures composed by UTBB transistors using back gate bias

  • Author

    R. T. Doria;R. Trevisoli;M. de Souza;M. A. Pavanello;D. Flandre

  • Author_Institution
    Electrical Engineering Department, Centro Universitá
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper explores the use of the back gate bias to enhance the analog performance of self-cascode structures composed by 25nm-long UTBB SOI MOSFETs. It is shown, for the first time, that the use of back gate bias can improve the intrinsic voltage gain by 15 dB, making it larger than the one presented by a 50nm-long single device.
  • Keywords
    "Transistors","Decision support systems","Silicon","Periodic structures","Solids","Liquids","CMOS integrated circuits"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333512
  • Filename
    7333512