CMOS-compatible FDSOI bipolar-enhanced tunneling FET

We propose and simulate a bipolar-enhanced tunneling field-effect transistor (BET-FET) with a lateral layout that is fully FDSOI compatible. Simulations calibrated to experimental TFET data show a high on-current of ION ∼ 260 μA/μm at VDD = 1 V and a subthreshold swing (SS) well below 60 mV/dec over 7 decades of drain current. The mechanism involves the combination of gate-controlled sharp TFET switching with current gain from a Si/Si1-xGex heterojunction bipolar transistor (HBT). An electrostatically controlled BET-FET variant with a local buried gate is also simulated.