Title :
Minimum-energy point design in FDSOI Regular-Vt
Author :
Lauri Koskinen;Markus Hiienkari;Matthew Turnquist;Philippe Flatresse
Author_Institution :
University of Turku, Technology Research Center, Turku, Finland
Abstract :
FDSOI has been shown to achieve extremely high performance at low operating voltages: a use-case extremely well suited for applications such as mobile processing. In IoT and Dark Silicon, use cases with extremely low application active times per standby times can be found. Investigated here are the turnover points where the higher threshold voltage and longer channel length options of FDSOI should be used. It was found that for activity factors below 3.2% to 0.5%, depending on the voltage, the Regular VT option of FDSOI should be used.
Keywords :
"Transistors","Libraries","Logic gates","Threshold voltage","Ring oscillators","Standards","Silicon"
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
DOI :
10.1109/S3S.2015.7333516
