• DocumentCode
    3694859
  • Title

    Minimum-energy point design in FDSOI Regular-Vt

  • Author

    Lauri Koskinen;Markus Hiienkari;Matthew Turnquist;Philippe Flatresse

  • Author_Institution
    University of Turku, Technology Research Center, Turku, Finland
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    FDSOI has been shown to achieve extremely high performance at low operating voltages: a use-case extremely well suited for applications such as mobile processing. In IoT and Dark Silicon, use cases with extremely low application active times per standby times can be found. Investigated here are the turnover points where the higher threshold voltage and longer channel length options of FDSOI should be used. It was found that for activity factors below 3.2% to 0.5%, depending on the voltage, the Regular VT option of FDSOI should be used.
  • Keywords
    "Transistors","Libraries","Logic gates","Threshold voltage","Ring oscillators","Standards","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333516
  • Filename
    7333516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694859