• DocumentCode
    3694862
  • Title

    Preliminary steps towards implementing intimate 3D-IC stacking with layer transfer and atomic bonding methods

  • Author

    Michael I. Current;W. Łukaszek;Shari Farrens;T. Fong

  • Author_Institution
    Current Scientific, San Jose, CA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Preliminary studies of radiation damage and recovery of E2PROM sensor devices following exposure to a high-dose, 1 MeV proton beam give encouragement to the use of H-cut and layer transfer methods for vertical integration of 3D-IC´s with fully-formed CMOS devices and metal interconnect.
  • Keywords
    "Protons","Implants","CMOS integrated circuits","Threshold voltage","Annealing","Ionization","Particle beams"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333519
  • Filename
    7333519
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694862