Title :
Quasi-static analytical model for the dynamic operation of triple-gate junctionless nanowire transistors
Author :
R. Trevisoli;R. T. Doria;M. de Souza;M. A. Pavanello
Author_Institution :
Electrical Engineering Department, Centro Universitá
Abstract :
This work presents, for the first time, an analytical and explicit model for the intrinsic transcapacitances and transconductances of triple-gate Junctionless Nanowire Transistors. The expressions are derived from a surface potential-based charge model and are validated with 3D TCAD numerical simulations.
Keywords :
"Logic gates","Capacitance","Transistors","Integrated circuit modeling","Analytical models","Nanoscale devices","Semiconductor device modeling"
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
DOI :
10.1109/S3S.2015.7333522
