Title :
Comparative simulation study on MoS2 FET and CMOS transistor
Author :
Ming Zhang;Po-Yen Chien;Jason C. S. Woo
Author_Institution :
Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, United States
Abstract :
MoS2 FET and SOI/FinFET are simulated and compared to experimental results and the impact of gate scaling-down on the transistor performance is studied. Though MoS2 FET shows better suppression of the short channel effect, its on-current is still lower than that of sSOI/FinFET down to 10nm physical channel length due to the low saturation velocity of MoS2. In addition, the improvement of mobility over 60cm2/Vs has little benefit for the on-current.
Keywords :
"FinFETs","Decision support systems"
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
DOI :
10.1109/S3S.2015.7333524
