• DocumentCode
    3694872
  • Title

    Epitaxial layer transfer technology and application

  • Author

    Takao Yonehara

  • Author_Institution
    Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054 USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Epitaxial Layer and Device Layer Transfer Technologies in Si and GaAs systems are reviewed from principle, processes, devices, to application systems over decades. Various applications span from SOI-Epi wafering, PV cells and Kerf-less Si PV Epi wafers, Flexible CMOS devices, Free standing thin IC chips, CMOS Si imagers, Solid-state optical scanner and Three dimensional integrated IC. The applications have been enabled by the key roles of the separation layer of removability and thermal stability for Epitaxial and Device Layers Transfer Technology.
  • Keywords
    "Silicon","CMOS integrated circuits","CMOS technology","Epitaxial growth","Decision support systems","Transistors"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333529
  • Filename
    7333529