Comparative study of parasitic elements on RF FoM in 28 nm FD SOI and bulk technologies

This work presents a comparison of parasitic elements (capacitances and resistances) in a view of their effect on RF Figures of Merit (FoM) in 28 nm fully-depleted silicon-on-insulator (FD SOI) ultra-thin body and buried oxide (UTBB) MOSFETs and their Bulk counterparts. Complete set of small-signal equivalent circuit elements (both “intrinsic”, i.e. device related and “extrinsic”, i.e. parasitic) are extracted from S-parameters measurements in a frequency range up to 40 GHz. It is shown that detrimental/harmful effect of parasitics, particularly capacitances, is stronger in 28 nm bulk technology compared to 28 FD SOI.