SiGe-on-insulator symmetric lateral bipolar transistors

We report the first demonstration of thin-base symmetric lateral NPN bipolar transistors built on 8-inch SiGe-on-insulator (SiGe-OI) wafers with CMOS-like process. Such devices achieve the same collector current as the SOI bipolar transistor at ∼130 mV lower VBE from effective bandgap lowering, translating into lower voltage operation and power dissipation. Various techniques of Emitter engineering were studied and a novel partial HBT device structure was demonstrated with 3x reduction of hole injection into the emitter.