DocumentCode :
3694882
Title :
128 × 96 Pixel-parallel three-dimensional integrated CMOS image sensors with 16-bit A/D converters: By direct bonding with embedded Au electrodes
Author :
Masahide Goto;Kei Hagiwara;Yuki Honda;Masakazu Nanba;Hiroshi Ohtake;Yoshinori Iguchi;Takuya Saraya;Masaharu Kobayashi;Eiji Higurashi;Hiroshi Toshiyoshi;Toshiro Hiramoto
Author_Institution :
NHK Science and Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate for the first time the operation of 128 × 96 pixel-parallel three-dimensional (3D) integrated CMOS image sensors with 16-bit A/D converters (ADCs). 3D integration of the photodiode (PD), pulse-frequency-modulation (PFM) ADCs and 16-bit counters were implemented within every pixel by utilizing direct bonding with embedded Au electrodes in a SiO2 insulator. We designed an in-pixel charge-transfer circuit suitable for the PFM-ADC to obtain high sensitivity. The developed sensor successfully confirmed its excellent linearity with a dynamic range of 96 dB, corresponding to a 16-bit value. We also captured 128 × 96 pixel-parallel video images constructed from the 16-bit outputs, demonstrating the feasibility of ultimate imaging devices for the next-generation.
Keywords :
"Gold","Three-dimensional displays","CMOS image sensors","Electrodes","Dynamic range","Bonding","Radiation detectors"
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
Type :
conf
DOI :
10.1109/S3S.2015.7333539
Filename :
7333539
Link To Document :
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