• DocumentCode
    3694882
  • Title

    128 × 96 Pixel-parallel three-dimensional integrated CMOS image sensors with 16-bit A/D converters: By direct bonding with embedded Au electrodes

  • Author

    Masahide Goto;Kei Hagiwara;Yuki Honda;Masakazu Nanba;Hiroshi Ohtake;Yoshinori Iguchi;Takuya Saraya;Masaharu Kobayashi;Eiji Higurashi;Hiroshi Toshiyoshi;Toshiro Hiramoto

  • Author_Institution
    NHK Science and Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate for the first time the operation of 128 × 96 pixel-parallel three-dimensional (3D) integrated CMOS image sensors with 16-bit A/D converters (ADCs). 3D integration of the photodiode (PD), pulse-frequency-modulation (PFM) ADCs and 16-bit counters were implemented within every pixel by utilizing direct bonding with embedded Au electrodes in a SiO2 insulator. We designed an in-pixel charge-transfer circuit suitable for the PFM-ADC to obtain high sensitivity. The developed sensor successfully confirmed its excellent linearity with a dynamic range of 96 dB, corresponding to a 16-bit value. We also captured 128 × 96 pixel-parallel video images constructed from the 16-bit outputs, demonstrating the feasibility of ultimate imaging devices for the next-generation.
  • Keywords
    "Gold","Three-dimensional displays","CMOS image sensors","Electrodes","Dynamic range","Bonding","Radiation detectors"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333539
  • Filename
    7333539