• DocumentCode
    3694885
  • Title

    Advanced channel materials for the semiconductor industry

  • Author

    N. Collaert;A. Alian;H. Arimura;G. Boccardi;G. Eneman;D. Lin;J. Mitard;S. Sioncke;N. Waldron;L. Witters;X. Zhou;A. V.-Y. Thean

  • Author_Institution
    Imec, Kapeldreef 75, 3001 Heverlee, Belgium
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed.
  • Keywords
    "Silicon","Substrates","Logic gates","FinFETs","Performance evaluation","Silicon germanium","III-V semiconductor materials"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333542
  • Filename
    7333542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694885