Title :
Advanced channel materials for the semiconductor industry
Author :
N. Collaert;A. Alian;H. Arimura;G. Boccardi;G. Eneman;D. Lin;J. Mitard;S. Sioncke;N. Waldron;L. Witters;X. Zhou;A. V.-Y. Thean
Author_Institution :
Imec, Kapeldreef 75, 3001 Heverlee, Belgium
Abstract :
In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed.
Keywords :
"Silicon","Substrates","Logic gates","FinFETs","Performance evaluation","Silicon germanium","III-V semiconductor materials"
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
DOI :
10.1109/S3S.2015.7333542
