Experimental study on quantum mechanical effect for insensitivity of threshold voltage against temperature variation in strained SOI MOSFETs

The temperature dependence of threshold voltage (VT) in a thin-body MOSFET, which was built on a strained silicon-on-insulator (sSOI) wafer, is examined in a temperature range of 173 K to 373 K. The insensitive temperature dependency of threshold voltage (VT) is attributed to the strain effect arisen from the sSOI, which makes the energy quantization stronger due to the lowered conductivity mass. Additionally, enhanced mobility of 770 cm²/V•sec at room temperature is achieved due to the strain effect.