Title :
Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology
Author :
B. Mohamad;G. Ghibaudo;C. Leroux;E. Josse;G. Reimbold
Author_Institution :
CEA-Leti, MINATEC Campus, 38054 Grenoble Cedex 9, France
Abstract :
In this paper, a full front and back split C-V characterization of FDSOI devices and associated methodology to accurately extract the EOT (Equivalent oxide thickness) of the front and back (BOX) oxide as well as the channel thickness are presented for the first time.
Keywords :
"Erbium","Logic gates","Tin","Silicon germanium"
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
DOI :
10.1109/S3S.2015.7333546
