• DocumentCode
    3694889
  • Title

    Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology

  • Author

    B. Mohamad;G. Ghibaudo;C. Leroux;E. Josse;G. Reimbold

  • Author_Institution
    CEA-Leti, MINATEC Campus, 38054 Grenoble Cedex 9, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, a full front and back split C-V characterization of FDSOI devices and associated methodology to accurately extract the EOT (Equivalent oxide thickness) of the front and back (BOX) oxide as well as the channel thickness are presented for the first time.
  • Keywords
    "Erbium","Logic gates","Tin","Silicon germanium"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333546
  • Filename
    7333546
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694889