• DocumentCode
    3694890
  • Title

    Impact of supercoupling effect on mobility enhancement in UTBB SOI in dynamic threshold mode

  • Author

    K. R. A. Sasaki;C. Navarro;M. Bawedin;S. Cristoloveanu;J. A. Martino;F. Andrieu

  • Author_Institution
    IMEP-LAHC, MINATEC INP Grenoble, Grenoble, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We investigate the supercoupling effect in N and P-type UTBB SOI transistors with dynamic threshold operation. The transconductance and mobility are analyzed for two silicon film thicknesses in conventional (grounded back gate) and dynamic threshold (eDT: VG2=kVG1) modes. Experiments show that the supercoupling enhances the volume inversion effect and improves the impact of the k-factor, leading to higher transconductance and mobility.
  • Keywords
    "Silicon","MOSFET","Threshold voltage","Transconductance","Films","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333547
  • Filename
    7333547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694890