Electrical performance of high bandwidth memory (HBM) interposer channel in terabyte/s bandwidth graphics module

Recently, IT trends such as big data, cloud computing, internet of things (IoT), 3D visualization, network, and so on demand terabyte/s bandwidth computer performance in a graphics card. In order to meet these performance, terabyte/s bandwidth graphics module using 2.5D-IC with high bandwidth memory (HBM) technology has been emerged. Due to the difference in scale of interconnect pitch between GPU or HBM and package substrate, the HBM interposer is certainly required for terabyte/s bandwidth graphics module. In this paper, the electrical performance of the HBM interposer channel in consideration of the manufacturing capabilities is analyzed by simulation both the frequency- and time-domain. Furthermore, although the silicon substrate is most widely employed for the HBM interposer fabrication, the organic and glass substrate are also proposed to replace the high cost and high loss silicon substrate. Therefore, comparison and analysis of the electrical performance of the HBM interposer channel using silicon, organic, and glass substrate are conducted.