DocumentCode
3695882
Title
New precision wafer bonding technologies for 3DIC
Author
Isao Sugaya;Hajime Mitsuishi;Hidehiro Maeda;Kazuya Okamoto
Author_Institution
Nikon Corporation, Nagaodai-cho 471, Sakae-ku, Yokohama, Kanagawa 244-8533, Japan
fYear
2015
Abstract
A new precision wafer-to-wafer (W2W) bonding system for three-dimensional integrated circuits (3DICs) fabrication including a new precision alignment methodology and a unique thermocompression bonding procedure is proposed. Experimental results show that the alignment capability is 100 nm or better, and permanent bonding accuracy of 260 nm (|mean| + 3σ) in 300 mm Cu wafer bonding. An analysis of overlay error components is useful for identifying the causes of the error and improving the tool conditions. These capabilities are key enablers for the future of cost-effective 3DIC manufacturing.
Keywords
"Silicon","Heating","Temperature measurement","Manufacturing","Aluminum nitride","III-V semiconductor materials"
Publisher
ieee
Conference_Titel
3D Systems Integration Conference (3DIC), 2015 International
Type
conf
DOI
10.1109/3DIC.2015.7334575
Filename
7334575
Link To Document