DocumentCode
3695907
Title
Development of high-quality low-temperature (≤ 120°C) PECVD-SiN films by organosilane
Author
Hiroshi Taka;Katsumasa Suzuki;Norihiro Tsujioka;Shoichi Murakami
Author_Institution
Development &
fYear
2015
Abstract
We obtained high-quality PECVD-SiN films deposited under 120°C using organosilane precursor. The SiN film has low hydrogen content and low BHF etching rate. In addition, SiN film properties did not change after pressure cooker test (PCT: 120°C, 0.2 MPa, 6 hours). The low-temperature deposition process for SiN films hold promise for improving 3DIC manufacturing process.
Keywords
"Films","Silicon compounds","Plasma temperature","Temperature","Temperature measurement","Substrates","Three-dimensional displays"
Publisher
ieee
Conference_Titel
3D Systems Integration Conference (3DIC), 2015 International
Type
conf
DOI
10.1109/3DIC.2015.7334600
Filename
7334600
Link To Document