MOM Capacitance Measurements in a 130 nm CMOS Node

MOM (Metal-Oxide-Metal) capacitors are today the workhorses for providing a large number of stored charges in sub-100 nm CMOS nodes. In these nodes the BEOL (Back-End-to-Line) distances are in the range of tens of nanometers. Even with increasing BEOL distances in broadly exploited and less expensive CMOS nodes with critical dimensions=130 nm or greater these structures are approaching into the focus as they allow the further shrink of analogue circuits. Furthermore these structures can be implemented without any additional mask adder to the conventional flow. We present results of capacitance measurements of various structures mainly to be distinguished by the distance of the metal lines. Values up to 1.27 fF/µm² will be reported. A simple empirical model consisting of an area and a fringing part is derived out of structures with same area but different perimeter.