Heavy Ion Testing of Commercial GaN Transistors in the Radio Frequency Spectrum

Commercial gallium nitride (GaN) high-electron mobility transistors (HEMTs) are tested in the radio frequency (RF) spectrum at heavy ion facilities to explore space environment stresses on these emerging technologies. Findings indicate that gate leakage degradation is a key parameter to consider when selecting devices. Variations in the manufacturing process may drive product selection for use in harsh environments.