DocumentCode :
3697280
Title :
Predicting Optocoupler Life with Radiation Damage in Various Circuits
Author :
J. Brelski;D. M. Hiemstra
Author_Institution :
MDA, Brampton, ON, Canada
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
6
Abstract :
The effectiveness of using generic proton displacement damage test results to predict the radiation degradation of optocouplers across different circuit applications is presented. Test results are provided for the 4N49 from three lots and compared to a simple model. Estimating the life of circuits using this model is discussed.
Keywords :
"Light emitting diodes","Resistors","Degradation","Phototransistors","Extraterrestrial measurements","Current measurement","Integrated circuit modeling"
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
Type :
conf
DOI :
10.1109/REDW.2015.7336724
Filename :
7336724
Link To Document :
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