• DocumentCode
    3697285
  • Title

    Radiation Evaluation of Ferroelectric Random Access Memory Embedded in 180nm CMOS Technology

  • Author

    B. A. Dahl;J. Cruz-Colon;R. C. Baumann;J. A. Rodriguez;C. Zhou;J. Rodriguez-Latorre;S. Khan;T. San;T. Trinh

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Radiation and Temperature Characterization results of a 2T-2C ferroelectric random access memory (FRAM) are presented. This includes Total Ionizing Dose (TID), Single Event Effects (SEE) and Temperature evaluation at 215 °C.
  • Keywords
    "Random access memory","Nonvolatile memory","Ferroelectric films","Reliability","Testing","Temperature sensors","Radiation effects"
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2015 IEEE
  • Print_ISBN
    978-1-4673-7641-9
  • Type

    conf

  • DOI
    10.1109/REDW.2015.7336729
  • Filename
    7336729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697285